Substrate dimensional control
New SOI wafers and new materials require thickness mapping, bow and warp metrology solution for total and individual layer thickness measurement.
Wafer on glass or silicon temporary carriers require total stack thickness measurement and top substrate individual thickness measurement.
Due to surface topography, product wafers require measurement on defined patterns. These patterns could be localized on the front side of the wafer or in between top substrate and temporary carrier in case of wafer over temporary carrier process.
Related products - T-MAP single or dual IR configuration with or without microscopy capability.